Study of dynamic biasing InGaAs/InAlAs avalanche photodiodes with different active areas.

In this work, by comparing and analyzing dynamic biasing InGaAs/InAlAs avalanche photodiodes(APDs) with different active areas, it is found that they have different noise suppression frequency ranges. The upper limit frequency(defined as the frequency at which the noise suppression effect begins to fail) of InGaAs/InAlAs APDs with active area diameter of 50 µm, 100 µm and 200 µm are 2400 MHz, 1990MHz and 1400 MHz respectively. In addition, for InGaAs/InAlAs APDs with an active area diameter of 50 µm, 100 µm and 200 µm, their optimal frequencies of dynamic biasing (defined as the frequency corresponding to the optimal SNR) are 1877MHz, 1670 MHz and 1075 MHz respectively. At last, applying dynamic biasing technology, it achieves a useful gain of 6698.1, which is much greater than that of DC bias (47.2), and this technology has the potential to be applied in high sensitivity laser radar receivers.

High signal-noise ratio avalanche photodiodes with dynamic biasing technology for laser radar applications.

In this work, a high signal-noise ratio (SNR) dynamic biasing InGaAs/InAlAs avalanche photodiode (APD) is demonstrated experimentally and first applied in a laser radar system. Combining with the dynamic biasing technology, the APDs are operated in an unexploited voltage range between linear mode and Geiger mode, which, in this work, is defined as a transition zone. Surprisingly, it is found that the excess noise of dynamic biasing APDs decreases with the gain in this transition zone. As expected, the maximum useful gain is as high as 620 in the dynamic biasing mode, which shows a greater promotion than that of the DC biasing mode (17.5). Compared with the traditional DC biasing mode, the optimal SNR for dynamic biasing mode is improved by 14 dB without the degradation of response time as the peak optical power is 525 nW. Moreover, when SNR = 10, the peak optical power for the dynamic biasing mode is 43.4 nW, which shows a 57.5-fold (17.6 dB) reduction in comparison with the DC biasing mode (2495 nW). Therefore, we believe this new optical receiver will pave a new way in high-sensitivity and high-speed light detection.

Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 µm.

With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electronics on silicon substrate chips is crucial to driving cost reduction and performance improvement; thus, the technical research on InGaAs/Si APD is of great significance. This work is the first to demonstrate the use of a photon-trapping (PT) structure to improve the performance of the InGaAs/Si APD based on an SOI substrate, which exhibits very high absorption efficiency at 1310 nm wavelength while the thickness of the absorption layer is kept at 800 nm. Based on the optical and electrical simulations, an optimized InGaAs/Si PT-APD is proposed, which exhibits a better performance and a higher responsivity compared to the original InGaAs/Si APD.